ELECTRONICS-QUIZ 18

ELECTRONICS-QUIZ 18

Dear Readers,

As per analysis for previous years, it has been observed that students preparing for NEET find Physics out of all the sections to be complex to handle and the majority of them are not able to comprehend the reason behind it. This problem arises especially because these aspirants appearing for the examination are more inclined to have a keen interest in Biology due to their medical background. Furthermore, sections such as Physics are dominantly based on theories, laws, numerical in comparison to a section of Biology which is more of fact-based, life sciences, and includes substantial explanations. By using the table given below, you easily and directly access to the topics and respective links of MCQs. Moreover, to make learning smooth and efficient, all the questions come with their supportive solutions to make utilization of time even more productive. Students will be covered for all their studies as the topics are available from basics to even the most advanced. .

Q1. To a germanium sample, traces of gallium are added as an impurity. The resultant sample would behave like

•  A conductor
•  A P-type semiconductor
•  An N-type semiconductor
•  An insulator

Solution
(b) Gallium is trivalent impurity

Q2.The coordination number of body centred crystal is

•  6
•  8
•  12
•  16

Solution
(b) In a body centred crystal each atom is in contact with eight atoms at the corners of the simple cubic cell, hence coordination number of bcc crystal is 8.

Q3. p-n junction is said to be forward biased, when

•  The positive pole of the battery is joined to the p-semiconductor and negative pole to the n-semiconductor
•  The positive pole of the battery is joined to the n-semiconductor and negative pole to the n-semiconductor and p-semiconductor
•  The positive pole of the battery is connected to n-semiconductor and p-semiconductor
•  A mechanical force is applied in the forward direction

Solution
(a) For forward biasing of p-n junction, the positive terminal of external battery is to be connected to p-semiconductor and negative terminal of battery to the n-semiconductor.

Q4. Identify the true statement for OR gate

•  Output Y will be 1 when input A or B or both are 1
•  Output Y will be 0 when the either of the inputs A or B is 1
•  Output Y will be 1 only when both the inputs A and B are 1
•  Output Y will be 1 only when either of the inputs A and B are 1

Solution
(a)In an OR gate, output Y is 1 only when either or both the inputs A and B are 1

Q5.In the circuit, if the forward voltage drop for the diode is 0.5 V, the current will be

•  3.4 mA
•  2 mA
•  2.5 mA
•  3 mA

Solution
(a) 3.4 mA  

Q6. The average value of output direct current in a half wave rectifier is

•  I⁰/π
•  I⁰/π
• πI⁰/2
•  2I⁰/π

Solution
(a) The average value of output direct current in a half wave rectifier is = (average value of current over a cycle)/2 =(2I₀/π)/2=I₀/π.

Q7.For given electric voltage signal dc value is

•  6.28 V
•  3.14 V
•  4 V
•  0 V

Solution
(c) V_dc=V_ac=(2V₀)/π=(2×6.28)/3.14=4V

Q8.Identify the operation performed by the circuit given in the figure.

•  NOT
•  AND
•  OR
•  NAND

Solution
(b)AND

Q9.An n-p-n- transistor circuit is arranged as shown in figure. It is

•  A common base amplifier circuit
•  A common emitter amplifier circuit
•  A common collector amplifier circuit
•  Neither of the above

Solution
(b) Here emitter is forward biased and is common between input and output circuit. Thus the circuit is of n-p-n transistor with a common emitter amplifier mode.

Q10. For the diode, the characteristics curves are given at different temperatures. The relation between the temperatures is

•  T₁=T₂=T₃
•   T₁<T₂<T₃
•  T₁>T₂>₃
•  None of these

Solution
(b) Higher the temperature of cathode, the larger is the value of saturation current.